SCT3030AL
N-channel SiC（碳化硅）功率MOSFET
SCT3030AL是650V 70A的Nch SiC功率MOSFET。
主要规格
型号 | SCT3030ALGC11
封装 |
TO-247N
包装形态 | Tube
包装数量 | 450
最小独立包装数量 | 30
RoHS |
Yes
特性：
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
30
Generation
3rd Gen (Trench)
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
Find Similar
特点：
? Low on-resistance
Reference Design - REFPDT007 5kW High-Efficiency Fan-less Inverter
We employ trans-linked interleaved circuits as inverter circuits that utilize the high frequency switching performance of silicon carbide (SiC) MOSFET, achieving a power conversion efficiency of 99% or more at 5kW.Since this circuit topology allows a reduction in the inductance of the smoothing reactor, the high efficiency is achieved by reducing the number of windings of the reactor to dramatically reduce the copper loss. These novel inverter circuits have been developed jointly with Power Assist Technology Ltd. (https://www.power-assist-tech.co.jp/ )
This reference design consists of three boards. Each is shown below.
REFPDT007-EVK-001A Power Stage REFPDT007-EVK-001B Controller Board REFPDT007-EVK-001C Aux Power Supply Since the interleaved type using SiC MOSFET (SCT3017AL, SCT3030AL) has an efficiency of 99.0% (total loss 51 W),heat generation is reduced, and the circuit can be cooled with downsized heat radiation fins without using a cooling fan.Furthermore, since the apparent switching frequency is doubled for the interleaved type, the smoothing filter is downsized by a factor of 2 in its size and weight.
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